Depth profiling of the Ge concentration in SiGe alloys using in situ ellipsometry during reactive-ion etching
- G.M.W. Kroesen
- G.S. Oehrlein
- et al.
- 1993
- Journal of Applied Physics
Publications
8 results for G.M.W. Kroesen
Refractive index determination of SiGe using reactive ion etching/ellipsometry: Application of the depth profiling of the GE concentration
- G.M.W. Kroesen
- G.S. Oehrlein
- et al.
- 1992
- Applied Physics Letters
Etching of silicon in low-pressure plasmas containing fluorine and oxygen: A comparison of real-time and postplasma surface studies
- Gottlieb S. Oehrlein
- Gerrit M.W. Kroesen
- et al.
- 1992
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Nonintrusive wafer temperature measurement using in situ ellipsometry
- G.M.W. Kroesen
- G.S. Oehrlein
- et al.
- 1991
- Journal of Applied Physics
Reactive ion etching of SiGe alloys using HBr
- Tim D. Bestwick
- Gottlieb S. Oehrlein
- et al.
- 1991
- Applied Physics Letters
Interactive effects in the reactive ion etching of SiGe alloys
- G.S. Oehrlein
- Y. Zhang
- et al.
- 1991
- Applied Physics Letters
Studies of the reactive ion etching of SiGe alloys
- G.S. Oehriein
- G.M.W. Kroesen
- et al.
- 1991
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
High-Mobility Modulation-Doped Graded Sige-Channel P-Mosfet's
- Sophie Verdonckt-Vandebroek
- Emmanuel F. Crabbé
- et al.
- 1991
- IEEE Electron Device Letters