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Carbon incorporation in metal-organic vapor phase epitaxy grown gaas from CHxl4-x, HI, and l2N.I. BuchanT.F. Kuechet al.1990Journal of Electronic Materials
Selective epitaxy of MOVPE GaAs using diethyl gallium chlorideT.F. KuechM.A. Tischleret al.1990Journal of Crystal Growth
Calculation of unimolecular rate constants for common metalorganic vapor phase epitaxy precursors via RRKM theoryN.I. BuchanJ.M. Jasinski1990Journal of Crystal Growth