Optical and electronic properties of doped silicon from 0.1 to 2 THz
- Martin Van Exter
- D. Grischkowsky
- 1990
- Applied Physics Letters
Paper
Publications
8 results for Martin van Exter
Terahertz optical properties of carriers in silicon
- Martin Van Exter
- D. Grischkowsky
- 1990
- IQEC 1990
Conference paperFar-infrared time-domain spectroscopy with terahertz beams of dielectrics and semiconductors
- D. Grischkowsky
- SØren Keiding
- et al.
- 1990
- Journal of the Optical Society of America B: Optical Physics
PaperCarrier dynamics of electrons and holes in moderately doped silicon
- Martin Van Exter
- D. Grischkowsky
- 1990
- Physical Review B
PaperCharacteristics of picosecond coherent anti-stokes raman spectroscopy with mode-locked dye lasers in comparison with stimulated raman gain
- M. Baggen
- M. Baggen
- et al.
- 1990
- Journal of the Optical Society of America B: Optical Physics
PaperCharacterization of an Optoelectronic Terahertz Beam System
- Martin van Exter
- Daniel R. Grischkowsky
- 1990
- IEEE T-MTT
PaperHigh-brightness terahertz beams characterized with an ultrafast detector
- Martin Van Exter
- Ch. Fattinger
- et al.
- 1989
- Applied Physics Letters
PaperTerahertz time-domain spectroscopy of water vapor
- Martin van Exter
- Ch. Fattinger
- et al.
- 1989
- Optics Letters
Paper