Role of implantation-induced defects in surface-oriented diffusion of fluorine in silicon
- Cs. Szeles
- B. Nielsen
- et al.
- 1994
- Journal of Applied Physics
Paper
Publications
7 results for Bent Nielsen
Positron annihilation studies in the field induced depletion regions of metal-oxide-semiconductor structures
- P. Asoka-Kumar
- T.C. Leung
- et al.
- 1992
- Journal of Applied Physics
PaperPositron annihilation at the Si/SiO2 interface
- T.C. Leung
- Z.A. Weinberg
- et al.
- 1992
- Journal of Applied Physics
PaperCentroid shift of γ rays from positron annihilation in the depletion region of metal-oxide-semiconductor structures
- T.C. Leung
- Y. Kong
- et al.
- 1991
- Applied Physics Letters
PaperSiO2/Si interface properties using positrons
- P. Asoka-Kumar
- K.G. Lynn
- et al.
- 1991
- Physical Review B
PaperMicrovoids and defect chemistry at the SiSiO2 interface studied by positron annihilation depth profiling
- G.W Rubloff
- B Nielsen
- et al.
- 1990
- Vacuum
PaperMicrovoids at the SiO2/Si interface
- Bent Nielsen
- K.G. Lynn
- et al.
- 1989
- Physical Review B
Paper