Analysis of a single-electron decimal adder
- Hossam Fahmy
- K. Ismail
- 1997
- Applied Physics Letters
Paper
Publications
67 results for K. Ismail
Negative differential conductance in lateral double-barrier transistors fabricated in strained Si quantum wells
- S.J. Koester
- K. Ismail
- et al.
- 1997
- Applied Physics Letters
PaperLow-field magnetoresistance in Si/SiGe quantum wells
- A. Prinz
- G. Brunthaler
- et al.
- 1997
- Thin Solid Films
PaperSi/SiGe CMOS: Can it extend the lifetime of Si?
- K. Ismail
- 1997
- ISSCC 1997
Conference paperElectrical characterization of Si/Si0.7Ge0.3 quantum well wires fabricated by low damage CF4 reactive ion etching
- K.Y. Lee
- S.J. Koester
- et al.
- 1997
- Microelectronic Engineering
PaperAn MOS transistor with Schottky source/drain contacts and a self-aligned low-resistance T-gate
- S. Rishton
- K. Ismail
- et al.
- 1997
- Microelectronic Engineering
PaperNew complimentary metal-oxide semiconductor technology with self-aligned Schottky source/drain and low-resistance T gates
- S. Rishton
- K. Ismail
- et al.
- 1997
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
PaperCMOS scaling into the nanometer regime
- Yuan Taur
- Douglas A. Buchanan
- et al.
- 1997
- Proceedings of the IEEE
PaperSubmicrometer p-Type SiGe modulation-doped field-effect transistors for high speed applications
- I. Adesida
- M. Arafa
- et al.
- 1997
- Microelectronic Engineering
PaperA 70-GHz fT low operating bias self-aligned p-type SiGe MODFET
- M. Arafa
- K. Ismail
- et al.
- 1996
- IEEE Electron Device Letters
Paper