High-power fundamental mode AlGaAs quantum well channeled substrate laser grown by molecular beam epitaxy
- H. Jaeckel
- H.P. Meier
- et al.
- 1989
- Applied Physics Letters
Paper
Publications
4 results for E. Van Gieson
Ga adatom migration over a nonplanar substrate during molecular beam epitaxial growth of GaAs/AlGaAs heterostructures
- S. Nilsson
- E. Van Gieson
- et al.
- 1989
- Applied Physics Letters
PaperMolecular beam epitaxy of GaAs/AlGaAs quantum wells on channeled substrates
- H.P. Meier
- E. Van Gieson
- et al.
- 1989
- Applied Physics Letters
PaperSurface diffusion effects in MBE growth of QWs on channeled substrate (100) GaAs for lasers
- H.P. Meier
- E. Van Gieson
- et al.
- 1989
- Journal of Crystal Growth
Paper