Some electrical properties of amorphous silicon/amorphous silicon nitride interfaces: Top nitride and bottom nitride configurations in MNS and TFT devices
- C. Godet
- Jerzy Kanicki
- et al.
- 1992
- Journal of Applied Physics
Paper
Publications
7 results for A. Gelatos
Transient photocapacitance and capacitance studies of interface and bulk states in metal / a-SiN1.6:H / a-Si:H / c-Si devices
- Christian Godet
- Jerzy Kanicki
- et al.
- 1991
- Journal of Non-Crystalline Solids
PaperBias stress-induced instabilities in amorphous silicon nitride/hydrogenated amorphous silicon structures: Is the "carrier-induced defect creation" model correct?
- A. Gelatos
- Jerzy Kanicki
- 1990
- Applied Physics Letters
PaperDirect observation of the silicon nitride on amorphous silicon interface states
- A. Gelatos
- Jerzy Kanicki
- 1990
- Applied Physics Letters
PaperStretched exponential illumination time dependence of positive charge and spin generation in amorphous silicon nitride
- Jerzy Kanicki
- M. Sankaran
- et al.
- 1990
- Applied Physics Letters
PaperLight-induced effects in hydrogenated amorphous nitrogen-rich silicon nitride films
- Jerzy Kanicki
- D. Jousse
- et al.
- 1989
- Journal of Non-Crystalline Solids
PaperInvestigation of the plasma deposited silicon dioxide on hydrogenated amorphous silicon interface by capacitance measurements
- A. Gelatos
- Peter Wagner
- et al.
- 1989
- Journal of Non-Crystalline Solids
Paper