Critical test of the structure of the ordered phase in epitaxially grown SixGe1-x films
- F.K. LeGoues
- R.M. Tromp
- et al.
- 1993
- Physical Review B
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33 results for Vijay P. Kesan
Cross-sectional scanning tunneling microscopy of MBE-grown Si p-n junctions and Si/SiGe superlattices
- E.T. Yu
- M. Johnson
- et al.
- 1993
- Journal of Crystal Growth
Experimental 0.1-um p-Channel MOSFET with p+-Polysilicon Gate on 35-A Gate Oxide
- Yuan Taur
- S. Cohen
- et al.
- 1993
- IEEE Electron Device Letters
Electroluminescence and Photoluminescence from Microporous Silicon p-n Junctions
- V.P. Kesan
- E. Bassous
- et al.
- 1993
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
High transconductance 0.1 μ m pMOSFET
- Y. Taur
- S. Cohen
- et al.
- 1992
- IEDM 1992
Interfacial reactions and Schottky barriers of Pt and Pd on epitaxial Si1-xGex alloys
- H.K. Liou
- X. Wu
- et al.
- 1992
- Applied Physics Letters
Raman spectroscopy of long-range order in epitaxial Si0.5Ge0.5 alloys
- J.C. Tsang
- V.P. Kesan
- et al.
- 1992
- Physical Review B
SiGe heterojunctions: Devices and applications
- Maurizio Arienzo
- James H. Comfort
- et al.
- 1992
- ESSDERC 1992
Influence of surface reconstructions and epitaxial-growth conditions on long-range order in Si1-xGex alloys
- V.P. Kesan
- F.K. LeGoues
- et al.
- 1992
- Physical Review B
Rapid-scan femtosecond ellipsometry of Si1-xGex and C60 crystalline films
- H.R. Choo
- M.C. Downer
- et al.
- 1992
- QELS 1992