Interface traps induced by hole trapping in metal-oxide semiconductor devicesY. RohL.P. Trombettaet al.1995Journal of Non-Crystalline SolidsPaper
New model of a common origin for trapped holes and anomalous positive charge in MOS capacitorsY. RohL.P. Trombettaet al.1993Microelectronic EngineeringPaper
An electron paramagnetic resonance study of electron injected oxides in metal-oxide-semiconductor capacitorsL.P. TrombettaG.J. Gerardiet al.1988Journal of Applied PhysicsPaper