Publications

4 results for Stephen A. Parke

Fault-tolerant designs for 256 Mb DRAM
- - Toshiaki Kirihata
  - Yohji Watanabe
  - et al.
- 1996
- IEEE Journal of Solid-State Circuits
Fault-tolerant designs for 256 Mb DRAM
- - Toshiaki Kirihata
  - Yohji Watanabe
  - et al.
- 1996
- IEICE Transactions on Electronics
A 0.6 µm² 256Mb Trench DRAM Cell with Self-Aligned Buried Strap (BEST)
- - L.A. Nesbit
  - J. Alsmeier
  - et al.
- 1993
- IEDM 1993
Highspeed Sensing Scheme for CMOS DRAM's
- - Sang H. Dhong
  - Nicky Chau-Chun Lu
  - et al.
- 1988
- IEEE Journal of Solid-State Circuits