0.22 μm CMOS-SOI technology with a Cu BEOLA. AjmeraJ. Sleightet al.1999VLSI Technology 1999Conference paper
A High-Density 6.9 sq. pm Embedded SRAM Cell in a High-Performance 0.25 μm-Generation CMOS Logic TechnologyS. SubbannaP. Agnelloet al.1996IEDM 1996Conference paper
Transient boron diffusion in ion-implanted crystalline and amorphous siliconT.O. SedgwickAlwin E. Michelet al.1988Journal of Applied PhysicsPaper