Temperature dependence of the electron and hole scattering mechanisms in silicon analyzed through a full-band, spherical-harmonics solution of the BTE
- Susanna Reggiani
- Maria Cristina Vecchi
- et al.
- 1998
- VLSI Design
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6 results for M. Rudan
Recent advances in device simulation using standard transport models
- G. Baccarani
- M. Rudan
- et al.
- 1998
- VLSI Design
Transient analysis of silicon devices using the hydrodynamic model
- Luigi Colalongo
- Marina Valdinoci
- et al.
- 1998
- VLSI Design
Investigation of non‐local transport phenomena in small semiconductor devices
- Antonio Gnudi
- Farouk Odeh
- et al.
- 1990
- European Transactions on Telecommunications
Numerical solution of the hydrodynamic model for a one-dimensional semiconductor device
- M. Rudan
- F. Odeh
- et al.
- 1987
- COMPEL - The international journal for computation and mathematics in electrical and electronic engineering
Multi-dimensional discretization scheme for the hydrodynamic model of semiconductor devices
- M. Rudan
- F. Odeh
- 1986
- COMPEL - The international journal for computation and mathematics in electrical and electronic engineering