Buried-trench DRAM cell using a self-aligned epitaxy over trench technology
- N.C.-C. Lu
- T.V. Rajeevakumar
- et al.
- 1988
- IEDM 1988
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23 results for Gary Bronner
Stacking-fault-induced defect creation in SiO2 on Si(100)
- M. Liehr
- G.B. Bronner
- et al.
- 1988
- Applied Physics Letters
Gettering of metal precipitates
- Gary Bronner
- James Plummer
- 1987
- ESSDERC 1987