Trade-offs in the integration of high performance devices with trench capacitor DRAM
- S.W. Crowder
- S. Stiffler
- et al.
- 1997
- IEDM 1997
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23 results for Gary Bronner
DRAM technologies for today's market and future DRAM generations
- W. Neumueller
- J. Alsmeier
- et al.
- 1997
- ESSDERC 1997
A 0.6 µm2 256Mb Trench DRAM Cell with Self-Aligned Buried Strap (BEST)
- L.A. Nesbit
- J. Alsmeier
- et al.
- 1993
- IEDM 1993
Trench storage capacitors for high density DRAMs
- T.V. Rajeevakumar
- T. Lii
- et al.
- 1991
- IEDM 1991
Characteristics of vertical p-channel MOSFETs for high density circuit application
- D.S. Wen
- W.H. Chang
- et al.
- 1991
- VLSI-TSA 1991
A 4-Mb Low-Temperature DRAM
- Rick L. Mohler
- Christopher W. Long
- et al.
- 1991
- IEEE Journal of Solid-State Circuits
Fabrication of CMOS on ultrathin SOI obtained by epitaxial lateral overgrowth and chemical-mechanical polishing
- G. Shahidi
- B. Davari
- et al.
- 1990
- IEDM 1990
Fully self-aligned epitaxial-base transistor
- R. Schulz
- M. Jost
- et al.
- 1989
- VLSI Technology 1989
Experimental 27 ns 1 Mb CMOS high-speed DRAM
- S. Dhong
- W.H. Henkels
- et al.
- 1989
- VLSI Circuits 1989
A 22-ns 1-Mbit CMOS High-Speed DRAM with Address Multiplexing
- Nicky C.C. Lu
- Gary B. Bronner
- et al.
- 1989
- IEEE Journal of Solid-State Circuits