Publications

23 results for Gary Bronner

Trade-offs in the integration of high performance devices with trench capacitor DRAM
- - S.W. Crowder
  - S. Stiffler
  - et al.
- 1997
- IEDM 1997
DRAM technologies for today's market and future DRAM generations
- - W. Neumueller
  - J. Alsmeier
  - et al.
- 1997
- ESSDERC 1997
A 0.6 µm² 256Mb Trench DRAM Cell with Self-Aligned Buried Strap (BEST)
- - L.A. Nesbit
  - J. Alsmeier
  - et al.
- 1993
- IEDM 1993
Trench storage capacitors for high density DRAMs
- - T.V. Rajeevakumar
  - T. Lii
  - et al.
- 1991
- IEDM 1991
Characteristics of vertical p-channel MOSFETs for high density circuit application
- - D.S. Wen
  - W.H. Chang
  - et al.
- 1991
- VLSI-TSA 1991
A 4-Mb Low-Temperature DRAM
- - Rick L. Mohler
  - Christopher W. Long
  - et al.
- 1991
- IEEE Journal of Solid-State Circuits
Fabrication of CMOS on ultrathin SOI obtained by epitaxial lateral overgrowth and chemical-mechanical polishing
- - G. Shahidi
  - B. Davari
  - et al.
- 1990
- IEDM 1990
Fully self-aligned epitaxial-base transistor
- - R. Schulz
  - M. Jost
  - et al.
- 1989
- VLSI Technology 1989
Experimental 27 ns 1 Mb CMOS high-speed DRAM
- - S. Dhong
  - W.H. Henkels
  - et al.
- 1989
- VLSI Circuits 1989
A 22-ns 1-Mbit CMOS High-Speed DRAM with Address Multiplexing
- - Nicky C.C. Lu
  - Gary B. Bronner
  - et al.
- 1989
- IEEE Journal of Solid-State Circuits