Electronic structure of metal/semiconductor interfaces from cathodoluminescence and soft X-ray photoemission spectroscopies
- L.J. Brillson
- I.M. Vitomirov
- et al.
- 1993
- Applied Surface Science
Paper
Publications
8 results for R.E. Viturro
Effect of semiconductor growth method and bulk doping on fermi level stabilization for aluminum and gold contacts on n- and p-GaAs(100)
- I.M. Vitomirov
- A. Raisanen
- et al.
- 1993
- Journal of Electronic Materials
PaperOptical emission properties of semi-insulating GaAs grown at low temperatures by molecular beam epitaxy
- R. Enrique Viturro
- Michael R. Melloch
- et al.
- 1992
- Applied Physics Letters
PaperGeometric ordering, surface chemistry, band bending, and work function at decapped GaAs(100) surfaces
- I.M. Vitomirov
- A. Raisanen
- et al.
- 1992
- Physical Review B
PaperSurface and interface states for GaAs(100) (1x1) and (4x2)-c(8x2) reconstructions
- I.M. Vitomirov
- A. Raisanen
- et al.
- 1992
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Conference paperMetal/(100) GaAs interface: Case for a metal-insulator-semiconductor-like structure
- J. Freeouf
- J. Woodall
- et al.
- 1990
- Applied Physics Letters
PaperBand bending and interface states for metals on GaAs
- R.E. Viturro
- J.L. Shaw
- et al.
- 1988
- Applied Physics Letters
PaperAbsence of Fermi level pinning at metal-InxGa1-xAs(100) interfaces
- L.J. Brillson
- M.L. Slade
- et al.
- 1986
- Applied Physics Letters
Paper