Publications

31 results for Gary L. Patton

Submicrometer Si and Si-Ge Epitaxial-Bas Double-Poly Self-Aligned Bipolar Transistors
- - T.C. Chen
  - E. Ganin
  - et al.
- 1991
- IEEE T-ED
Sub-30-ps ECL Circuit Operation at Liquid-Nitrogen Temperature Using Self-Aligned Epitaxial SiGe-Base Bipolar Transistors
- - John D. Cressler
  - James H. Comfort
  - et al.
- 1991
- IEEE Electron Device Letters
Epitaxial-base double-poly self-aligned bipolar transistors
- - E. Ganin
  - T.C. Chen
  - et al.
- 1990
- IEDM 1990
Sub-30ps ECL circuits using high-f_T Si and SiGe epitaxial base SEEW transistors
- - J.N. Burghartz
  - J.H. Comfort
  - et al.
- 1990
- IEDM 1990
EPI active devices
- - G.L. Patton
  - B.S. Meyerson
  - et al.
- 1990
- Silicon Materials Science and Technology 1990
Profile leverage in self-aligned epitaxial Si or SiGe base bipolar technology
- - J.H. Comfort
  - G.L. Patton
  - et al.
- 1990
- IEDM 1990
SiGe-base PNP transistors fabricated with N-type UHV/CVD LTE in a 'No Dt' process
- - D.L. Harame
  - J.M.C. Stork
  - et al.
- 1990
- VLSI Technology 1990
63-75 GHz f_T SiGe-base heterojunction bipolar technology
- - G.L. Patton
  - J.H. Comfort
  - et al.
- 1990
- VLSI Technology 1990
SiGe-base heterojunction bipolar transistors: Physics and design issues
- - G.L. Patton
  - J.M.C. Stork
  - et al.
- 1990
- IEDM 1990
Low temperature operation of Si and SiGe bipolar transistors
- - E.F. Crabbe
  - G.L. Patton
  - et al.
- 1990
- IEDM 1990