A Model for Anomalous Short-Channel Behavior in Submicron MOSFET’s
- H.I. Hanafi
- Y. Lii
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- 1993
- IEEE Electron Device Letters
Publications
4 results for Wendell P. Noble
Variable-size shallow trench isolation (STI) technology with diffused sidewall doping for submicron CMOS
- B. Davari
- C. Koburger
- et al.
- 1988
- IEDM 1988
A Substrate-Plate Trench-Capacitor (SPT) Memory Cell for Dynamic RAM's
- Nicky Chau-Chun Lu
- Tak H. Ning
- et al.
- 1986
- IEEE Journal of Solid-State Circuits
SPT CELL - A NEW SUBSTRATE - PLATE TRENCH CELL FOR DRAMS.
- N.C.-C. Lu
- P.E. Cottrell
- et al.
- 1984
- IEDM 1984