POST OXIDATION ANNEAL AND RE-OXIDATION EFFECTS IN 5 nm SiO//2 FILMS.
- L. Dori
- M. Arienzo
- et al.
- 1986
- MRS Fall Meeting 1986
Conference paper
Publications
16 results for Leonello Dori
Trapping properties of very thin nitride/oxide gate insulators
- J.Y.-C. Sun
- M. Arienzo
- et al.
- 1987
- ESSDERC 1987
Conference paperBallistic electron transport in thin silicon dioxide films
- M.V. Fischetti
- D.J. Dimaria
- et al.
- 1987
- Physical Review B
PaperElectron avalanche injection on 10-nm dielectric films
- Leonello Dori
- Maurizio Arienzo
- et al.
- 1987
- Journal of Applied Physics
PaperDirect observation of ballistic electrons in silicon dioxide
- D.J. DiMaria
- M.V. Fischetti
- et al.
- 1986
- Physical Review Letters
PaperEffect of post-oxidation anneal on ultrathin SiO2 gate oxides
- Maurizio Arienzo
- Leonello Dori
- et al.
- 1986
- Applied Physics Letters
Paper