Growth mode and dislocation distribution in the ZnSe/GaAs (100) system
- S. Guha
- H. Munekata
- et al.
- 1992
- Applied Physics Letters
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111 results for F.K. LeGoues
Erbium-doped silicon prepared by UHV/CVD
- D.B. Beach
- R.T. Collins
- et al.
- 1992
- MRS Proceedings 1992
Raman spectroscopy of long-range order in epitaxial Si0.5Ge0.5 alloys
- J.C. Tsang
- V.P. Kesan
- et al.
- 1992
- Physical Review B
Influence of surface reconstructions and epitaxial-growth conditions on long-range order in Si1-xGex alloys
- V.P. Kesan
- F.K. LeGoues
- et al.
- 1992
- Physical Review B
Photoluminescence from pseudomorphically strained Si/Si1-xGex multiple quantum wells grown on silicon
- Stefan Zollner
- R.T. Collins
- et al.
- 1992
- SPIE Semiconductors 1992
In situ study of relaxation of SiGe thin films by the modified Frank-Read mechanism
- F.K. LeGoues
- J.A. Ott
- et al.
- 1992
- Applied Physics Letters
Dopant diffusion in silicides: Effect of diffusion paths
- Carol Stanis
- J.M. Cotte
- et al.
- 1992
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Strain-relief mechanism in surfactant-grown epitaxial germanium films on Si(111)
- F.K. LeGoues
- M. Horn-Von Hoegen
- et al.
- 1991
- Physical Review B
High-quality GaAs on sawtooth-patterned Si substrates
- K. Ismail
- F. Legoues
- et al.
- 1991
- Applied Physics Letters
Characterization of Si/SiGe strained-layer superlattices grown by ultrahigh vacuum/chemical vapor deposition technique
- P.J. Wang
- M.S. Goorsky
- et al.
- 1991
- Applied Physics Letters