Improved hot-carrier reliability of SOI transistors by deuterium passivation of defects at oxide/silicon interfaces
- Kangguo Cheng
- Jinju Lee
- et al.
- 2002
- IEEE Transactions on Electron Devices
Paper
Publications
7 results for Karl Hess
Deuterium passivation of interface traps in MOS devices
- Kangguo Cheng
- Karl Hess
- et al.
- 2001
- IEEE Electron Device Letters
PaperRevisiting the analytic theory of p-n junction impedance: Improvements guided by computer simulation leading to a new equivalent circuit
- Steven E. Laux
- Karl Hess
- 1999
- IEEE Transactions on Electron Devices
PaperElectronic structure calculations using an adaptive wavelet basis
- D.A. Richie
- P. Von Allmen
- et al.
- 1998
- VLSI Design
PaperGain calculation in a quantum well laser simulator using an eight band k·p model
- F. Oyafuso
- P. Von Allmen
- et al.
- 1998
- VLSI Design
PaperEnsemble Monte Carlo simulations of femtosecond energy relaxation of photoexcited electrons in bulk GaAs
- D.W. Bailey
- C.J. Stanton
- et al.
- 1988
- Solid State Electronics
PaperTransient Electronic Transport in InP Under the Condition of High-Energy Electron Injection
- Kevin Brennan
- Karl Hess
- et al.
- 1983
- IEEE T-ED
Paper