Observation of multiple silicon dangling bond configurations in silicon nitride
- D. Jousse
- Jerzy Kanicki
- et al.
- 1989
- Applied Physics Letters
Publications
60 results for Jerzy Kanicki
Gate dielectric and contact effects in hydrogenated amorphous silicon-silicon nitride thin-film transistors
- Naftali Lustig
- Jerzy Kanicki
- 1989
- Journal of Applied Physics
Electron spin resonance study of metal-nitride-silicon structures: Observation of Si dangling bonds with different configurations and trapping properties in silicon nitride
- D. Jousse
- Jerzy Kanicki
- et al.
- 1989
- Applied Surface Science
Spatial Charge Distribution in As-Deposited and UV-Illuminated Gate-Quality Nitrogen-Rich Silicon Nitride
- Jerzy Kanicki
- D. Jousse
- 1989
- IEEE Electron Device Letters
The nature of the dominant deep trap in amorphous silicon nitride films: Evidence for a negative correlation energy
- P. Lenahan
- D.T. Krick
- et al.
- 1989
- Applied Surface Science
Stability of electrical properties of nitrogen-rich, silicon-rich, and stoichiometric silicon nitride films
- W.S. Lau
- S.J. Fonash
- et al.
- 1989
- Journal of Applied Physics
Electrically active point defects in amorphous silicon nitride: An illumination and charge injection study
- D.T. Krick
- P. Lenahan
- et al.
- 1988
- Journal of Applied Physics
Contact resistance to undoped and phosphorus-doped hydrogenated amorphous silicon films
- Jerzy Kanicki
- 1988
- Applied Physics Letters
Nature of the dominant deep trap in amorphous silicon nitride
- D.T. Krick
- P. Lenahan
- et al.
- 1988
- Physical Review B
Electron spin resonance spectroscopy of defects in low temperature dielectric films
- D. Jousse
- Jerzy Kanicki
- et al.
- 1989
- Proceedings of SPIE 1989