Publications

90 results for Jack Y. C. Sun

Si/SiGe Epitaxial-Base Transistors—Part I: Materials, Physics, and Circuits
- - D.L. Harame
  - J.H. Comfort
  - et al.
- 1995
- IEEE Transactions on Electron Devices
Measurement of I—V Curves of Silicon-on-Insulator (SOI) MOSFET's Without Self-Heating
- - Keith A. Jenkins
  - J.Y.-C. Sun
- 1995
- IEEE Electron Device Letters
Si/SiGe Epitaxial-Base Transistors—Part II: Process Integration and Analog Applications
- - D.L. Harame
  - J.H. Comfort
  - et al.
- 1995
- IEEE Transactions on Electron Devices
On the Transient Operation of Partially Depleted SOI NMOSFET's
- - Jacques Gautier
  - Jack Y.-C. Sun
- 1995
- IEEE Electron Device Letters
Effect of the back gate conduction on 0.25 μm SOI devices
- - J.L. Pelloie
  - D.K. Sadana
  - et al.
- 1994
- IEDM 1994
An Epitaxial Emitter-Cap SiGe-Base Bipolar Technology Optimized for Liquid-Nitrogen Temperature Operation
- - John D. Cressler
  - Emmanuel F. Crabbé
  - et al.
- 1994
- IEEE Electron Device Letters
MODELING ON INCREASE OF N-P-N AND P-N-P CURRENT GAIN BY HYDROGEN ELECTROMIGRATION IN POLYSILICON EMITTERS
- - J. Zhao
  - G.P. Li
  - et al.
- 1993
- IEDM 1993
A high performance 0.15 μm CMOS
- - G. Shahidi
  - J. Warnock
  - et al.
- 1993
- VLSI Technology 1993
A SiGe-base PNP ECL circuit technology
- - D.L. Harame
  - J.H. Comfort
  - et al.
- 1993
- VLSI Technology 1993
A room temperature 0.1 μm CMOS on SOI
- - G. Shahidi
  - C. Blair
  - et al.
- 1993
- VLSI Technology 1993