A Study of silicon incorporation in GaAs MOCVD Layers
- E. Veuhoff
- T.F. Kuech
- et al.
- 2019
- JES
Paper
Publications
7 results for E. Veuhoff
Properties of high-purity AlxGa1-xAs grown by the metalorganic vapor-phase-epitaxy technique using methyl precursors
- T.F. Kuech
- D.J. Wolford
- et al.
- 1987
- Journal of Applied Physics
PaperThe influence of growth chemistry on the MOVPE growth of GaAs and AlxGa1-xAs layers and heterostructures
- T.F. Kuech
- E. Veuhoff
- et al.
- 1986
- Journal of Crystal Growth
PaperLOW TEMPERATURE GROWTH OF Al//xGa//1// minus //xAs BY MOCVD.
- T.F. Kuech
- E. Veuhoff
- et al.
- 1984
- Gallium Arsenide and Related Compounds 1984
Conference paperDisilane: A new silicon doping source in metalorganic chemical vapor deposition of GaAs
- T.F. Kuech
- B.S. Meyerson
- et al.
- 1984
- Applied Physics Letters
PaperSilicon doping of GaAs and AlxGa1-xAs using disilane in metalorganic chemical vapor deposition
- T.F. Kuech
- E. Veuhoff
- et al.
- 1984
- Journal of Crystal Growth
PaperMechanism of carbon incorporation in MOCVD GaAs
- T.F. Kuech
- E. Veuhoff
- 1984
- Journal of Crystal Growth
Paper