Publications

138 results for B.S. Meyerson

Submicrometer Si and Si-Ge Epitaxial-Bas Double-Poly Self-Aligned Bipolar Transistors
- - T.C. Chen
  - E. Ganin
  - et al.
- 1991
- IEEE T-ED
High-Mobility Modulation-Doped Graded Sige-Channel P-Mosfet's
- - Sophie Verdonckt-Vandebroek
  - Emmanuel F. Crabbé
  - et al.
- 1991
- IEEE Electron Device Letters
Self-Aligned Bipolar Epitaxial Base n-p-n Transistors by Selective Epitaxy Emitter Window (SEEW) Technology
- - Joachim N. Burghartz
  - Siegfried R. Mader
  - et al.
- 1991
- IEEE T-ED
Sub-30-ps ECL Circuit Operation at Liquid-Nitrogen Temperature Using Self-Aligned Epitaxial SiGe-Base Bipolar Transistors
- - John D. Cressler
  - James H. Comfort
  - et al.
- 1991
- IEEE Electron Device Letters
Epitaxial-base double-poly self-aligned bipolar transistors
- - E. Ganin
  - T.C. Chen
  - et al.
- 1990
- IEDM 1990
Bistable conditions for low-temperature silicon epitaxy
- - Bernard S. Meyerson
  - Franz J. Himpsel
  - et al.
- 1990
- Applied Physics Letters
A 26 ps self-aligned epitaxial silicon base bipolar technology
- - J.H. Comfort
  - P.F. Lu
  - et al.
- 1990
- VLSI Technology 1990
63-75 GHz f_T SiGe-base heterojunction bipolar technology
- - G.L. Patton
  - J.H. Comfort
  - et al.
- 1990
- VLSI Technology 1990
EPI active devices
- - G.L. Patton
  - B.S. Meyerson
  - et al.
- 1990
- Silicon Materials Science and Technology 1990
Sub-30ps ECL circuits using high-f_T Si and SiGe epitaxial base SEEW transistors
- - J.N. Burghartz
  - J.H. Comfort
  - et al.
- 1990
- IEDM 1990