Publications

138 results for B.S. Meyerson

SiGe-base heterojunction bipolar transistors: Physics and design issues
- - G.L. Patton
  - J.M.C. Stork
  - et al.
- 1990
- IEDM 1990
EPI active devices
- - G.L. Patton
  - B.S. Meyerson
  - et al.
- 1990
- Silicon Materials Science and Technology 1990
Profile leverage in self-aligned epitaxial Si or SiGe base bipolar technology
- - J.H. Comfort
  - G.L. Patton
  - et al.
- 1990
- IEDM 1990
Low temperature operation of Si and SiGe bipolar transistors
- - E.F. Crabbe
  - G.L. Patton
  - et al.
- 1990
- IEDM 1990
75-GHz fT SiGe-Base Heterojunction Bipolar Transistors
- - Gary L. Patton
  - James H. Comfort
  - et al.
- 1990
- IEEE Electron Device Letters
The Implementation of a Reduced-Field Profile Design for High-Performance Bipolar Transistors
- - Pong-Fei Lu
  - James H. Comfort
  - et al.
- 1990
- IEEE Electron Device Letters
Self-Aligned SiGe-Base Heterojunction Bipolar Transistor by Selective Epitaxy Emitter Window (SEEW) Technology
- - Joachim N. Burghartz
  - James H. Comfort
  - et al.
- 1990
- IEEE Electron Device Letters
Diamondlike carbon films by rf plasma-assisted chemical vapor deposition from acetylene
- - A. Grill
  - B.S. Meyerson
  - et al.
- 1990
- IBM J. Res. Dev
Narrow band gap base heterojunction bipolar transistors using SiGe alloys
- - Subramanian S. Iyer
  - G.L. Patton
  - et al.
- 1990
- Thin Solid Films
Low-temperature Si and Si:Ge epitaxy by ultrahigh-vacuum/chemical vapor deposition. Process fundamentals
- - B.S. Meyerson
- 1990
- IBM J. Res. Dev