Correlation Between the Diffusive and Electrical Barrier Properties of the Interface in Polysilicon Contacted n+-p JunctionsJohannes M.C. StorkMaurizio Arienzoet al.1985IEEE T-ED
The poly-single crystalline silicon interfaceC.Y. WongAlwin E. Michelet al.1984Journal of Applied Physics
Formation of thin films of NiSi: Metastable structure, diffusion mechanisms in intermetallic compoundsF.M. D'HeurleC.S. Peterssonet al.1984Journal of Applied Physics
Grain boundary-solute interactions in polycrystalline silicon and germaniumD.A. SmithC.R.M. Grovenoret al.1984Ultramicroscopy