Theory of electron transport in small semiconductor devices using the Pauli master equation
- M.V. Fischetti
- 1998
- Journal of Applied Physics
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102 results for Massimo V. Fischetti
Light emission during direct and Fowler-Nordheim tunneling in ultra thin MOS tunnel junctions
- E. Cartier
- J.C. Tsang
- et al.
- 1997
- Microelectronic Engineering
Band structure, deformation potentials, and carrier mobility in strained Si Ge, and SiGe alloys
- M.V. Fischetti
- S.E. Laux
- 1996
- Journal of Applied Physics
Understanding hot-electron transport in silicon devices: Is there a shortcut?
- M.V. Fischetti
- S.E. Laux
- et al.
- 1995
- Journal of Applied Physics
Impact ionization in silicon
- E. Cartier
- M.V. Fischetti
- et al.
- 1993
- Applied Physics Letters
Monte Carlo study of electron transport in silicon inversion layers
- M.V. Fischetti
- S.E. Laux
- 1993
- Physical Review B
IIA-7 Monte Carlo Simulations of p-and n-Channel Dual-Gate Si MOSFET's at the Limits of Scaling
- D.J. Frank
- S.E. Laux
- et al.
- 1993
- IEEE Transactions on Electron Devices
Effect of the electron-plasmon interaction on the electron mobility in silicon
- M.V. Fischetti
- 1991
- Physical Review B
Coulombic and neutral trapping centers in silicon dioxide
- D.A. Buchanan
- M.V. Fischetti
- et al.
- 1991
- Physical Review B
Monte Carlo Simulation of Transport in Technologically Significant Semiconductors of the Diamond and Zinc-Blende Structures—Part II: Submicrometer MOSFET's
- Massimo V. Fischetti
- Steven E. Laux
- 1991
- IEEE T-ED