Monte Carlo simulation of electron transport in Si: The first 20 years
- M.V. Fischetti
- S.E. Laux
- 1996
- ESSDERC 1996
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102 results for Massimo V. Fischetti
Full-band Monte Carlo simulation of high-energy transport and impact ionization of electrons and holes in Ge, Si, and GaAs
- M.V. Fischetti
- N. Sano
- et al.
- 1996
- SISPAD 1996
Band structure, deformation potentials, and carrier mobility in strained Si Ge, and SiGe alloys
- M.V. Fischetti
- S.E. Laux
- 1996
- Journal of Applied Physics
Monte Carlo study of sub-band-gap impact ionization in small silicon field-effect transistors
- M.V. Fischetti
- S.E. Laux
- 1995
- IEDM 1995
Transport models for advanced device simulation - truth or consequences?
- S.E. Laux
- M.V. Fischetti
- 1995
- BCTM 1995
Understanding hot-electron transport in silicon devices: Is there a shortcut?
- M.V. Fischetti
- S.E. Laux
- et al.
- 1995
- Journal of Applied Physics
mcplotgl: Graphics for the DAMOCLES Program
- S.E. Laux
- M.V. Fischetti
- 1994
- IEDM 1994
Impact ionization in silicon
- E. Cartier
- M.V. Fischetti
- et al.
- 1993
- Applied Physics Letters
Monte Carlo study of electron transport in silicon inversion layers
- M.V. Fischetti
- S.E. Laux
- 1993
- Physical Review B
Monte carlo simulations of p- And n-channel dual-gate Si MOSFETs at the limits of scaling
- D.J. Frank
- S.E. Laux
- et al.
- 1993
- Device Research Conference 1993