Band-structure and quantum effects on hole transport in p-MOSFETs
- Santhosh Krishnan
- Dragica Vasileska
- et al.
- 2005
- Journal of Computational Electronics
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102 results for Massimo V. Fischetti
Thirty years of Monte Carlo simulations of electronic transport in semiconductors: Their relevance to science and mainstream VLSI technology
- M.V. Fischetti
- S.E. Laux
- et al.
- 2004
- Journal of Computational Electronics
Analysis of quantum ballistic electron transport in ultrasmall silicon devices including space-charge and geometric effects
- S.E. Laux
- A. Kumar
- et al.
- 2004
- Journal of Applied Physics
Remote Coulomb scattering in metal-oxide-semiconductor field effect transistors: Screening by electrons in the gate
- F. Gámiz
- M.V. Fischetti
- 2003
- Applied Physics Letters
Scaling MOSFETs to the Limit: A Physicists's Perspective
- M.V. Fischetti
- 2003
- Journal of Computational Electronics
Does Circulation in Individual Current States Survive in the Total Current Density?
- S.E. Laux
- A. Kumar
- et al.
- 2003
- Journal of Computational Electronics
Hot-carrier charge trapping and trap generation in HfO2 and Al2O3 field-effect transistors
- Arvind Kumar
- Massimo V. Fischetti
- et al.
- 2003
- Journal of Applied Physics
Six-band k·p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness
- M.V. Fischetti
- Z. Ren
- et al.
- 2003
- Journal of Applied Physics
Charge trapping related threshold voltage instabilities in high permittivity gate dielectric stacks
- Sufi Zafar
- Alessandro Callegari
- et al.
- 2003
- Journal of Applied Physics
Comment on "unified compact theory of tunneling gate current in metal-oxide-semiconductor structures: Quantum and image force barrier lowering" [Journal of Applied Physics 92, 3724 (2002)]
- M.V. Fischetti
- 2003
- Journal of Applied Physics