Publications

102 results for Massimo V. Fischetti

Simulation of quantum electronic transport in small devices: A Master equation approach
- - M.V. Fischetti
  - S.E. Laux
  - et al.
- 2003
- IEDM 2003
Hot-carrier charge trapping and trap generation in HfO₂ and Al₂O₃ field-effect transistors
- - Arvind Kumar
  - Massimo V. Fischetti
  - et al.
- 2003
- Journal of Applied Physics
Six-band k·p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness
- - M.V. Fischetti
  - Z. Ren
  - et al.
- 2003
- Journal of Applied Physics
Charge trapping related threshold voltage instabilities in high permittivity gate dielectric stacks
- - Sufi Zafar
  - Alessandro Callegari
  - et al.
- 2003
- Journal of Applied Physics
Comment on "unified compact theory of tunneling gate current in metal-oxide-semiconductor structures: Quantum and image force barrier lowering" [Journal of Applied Physics 92, 3724 (2002)]
- - M.V. Fischetti
- 2003
- Journal of Applied Physics
Charge trapping in high K gate dielectric stacks
- - Sufi Zafar
  - Alessandro Callegari
  - et al.
- 2002
- IEDM 2002
Ballistic FET modeling using QDAME: Quantum device analysis by modal evaluation
- - Steven E. Laux
  - Arvind Kumar
  - et al.
- 2002
- IEEE TNANO
QDAME simulation of 7.5 nm double-gate Si nFETs with differing access geometries
- - S.E. Laux
  - A. Kumar
  - et al.
- 2002
- IEDM 2002
On the enhanced electron mobility in strained-silicon inversion layers
- - M.V. Fischetti
  - F. Gámiz
  - et al.
- 2002
- Journal of Applied Physics
Hot-carrier charge trapping and reliability in high-K dielectrics
- - Arvind Kumar
  - Tak H. Ning
  - et al.
- 2002
- VLSI Technology 2002