Publications

9 results for R.L. Kleinhenz

Effect of end-of-range defects on device leakage in direct silicon bonded (DSB) technology
- - Haizhou Yin
  - M. Hamaguchi
  - et al.
- 2008
- VLSI-TSA 2008
Scalability of Direct Silicon Bonded (DSB) technology for 32nm node and beyond
- - Haizhou Yin
  - C.Y. Sung
  - et al.
- 2007
- VLSI Technology 2007
EPR Observation of an Au‐Fe Complex in Silicon: I. Experimental Data
- - R.L. Kleinhenz
  - Y.H. Lee
  - et al.
- 2006
- physica status solidi (b)
An overview of 300mm SOI starting wafer quality and its yield detractors
- - Pei Y. Tsai
  - Marlene Almonte
  - et al.
- 2005
- ISTFA 2005
Qualification of 300 mm SOI CMOS substrate material: Readiness for development and manufacturing
- - H.J. Hovel
  - M. Almonte
  - et al.
- 2004
- Solid-State Electronics
0.21 μm² 7F² trench cell with a locally-open globally-folded dual bitline for 1 Gb/4 Gb DRAM
- - C. Radens
  - U. Gruening
  - et al.
- 1998
- VLSI Technology 1998
A 0.6 µm² 256Mb Trench DRAM Cell with Self-Aligned Buried Strap (BEST)
- - L.A. Nesbit
  - J. Alsmeier
  - et al.
- 1993
- IEDM 1993
Interstitial oxygen reduction in silicon at thermal donor temperatures
- - M.P. Guse
  - R.L. Kleinhenz
- 1992
- Journal of Applied Physics
Non-intrusive mapping of subsurface defects in semiconductors
- - D. Guidotti
  - M.A. Taubenblatt
  - et al.
- 1992
- Applied Physics A Solids and Surfaces