Impact of surface processing on Al/GaAs(100) interface states
- I.M. Vitomirov
- A. Raisanen
- et al.
- 1992
- Solid State Communications
Paper
Publications
69 results for P.D. Kirchner
Surface and interface states for GaAs(100) (1x1) and (4x2)-c(8x2) reconstructions
- I.M. Vitomirov
- A. Raisanen
- et al.
- 1992
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Conference paperHigh carbon doping efficiency of bromomethanes in gas source molecular beam epitaxial growth of GaAs
- T.J. De Lyon
- N.I. Buchan
- et al.
- 1991
- Applied Physics Letters
PaperTemperature dependence of the photoreflectance of a strained layer (001) In0.21Ga0.79As/GaAs single quantum well
- Y.S. Huang
- H. Qiang
- et al.
- 1991
- Journal of Applied Physics
PaperHighly carbon-doped p-type Ga0.5In0.5As and Ga 0.5In0.5P by carbon tetrachloride in gas-source molecular beam epitaxy
- T.P. Chin
- P.D. Kirchner
- et al.
- 1991
- Applied Physics Letters
PaperPhotoreflectance study of surface photovoltage effects at (100)GaAs surfaces/interfaces
- X. Yin
- H.-M. Chen
- et al.
- 1991
- Applied Physics Letters
PaperHigh-frequency operation of heavily carbon-doped Ga0.51In 0.49P/GaAs surface-emitting light-emitting diodes grown by metalorganic molecular beam epitaxy
- T.J. De Lyon
- J. Woodall
- et al.
- 1991
- Applied Physics Letters
PaperSurface fermi level engineering - Or there's more to schottky barriers than just the arguments among physicists
- J. Woodall
- Alan C. Warren
- et al.
- 1991
- IEE/LEOS Summer Topical Meetings 1991
Conference paperCorrelation of deep-level and chemically-active-site densities at vicinal GaAs(100)-Al interfaces
- S. Chang
- I.M. Vitomirov
- et al.
- 1991
- Physical Review B
PaperIn situ photoreflectance study of the effects of sputter/annealing on the Fermi level at (001)n- and p-type GaAs surfaces
- X. Yin
- H.-M. Chen
- et al.
- 1991
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Paper