Publications

69 results for P.D. Kirchner

InP/InGaAs Heterojunction Bipolar Transistors Grown by Gas-Source Molecular Beam Epitaxy with Carbon-Doped Base
- - Russell C. Gee
  - Tsung-Pei Chin
  - et al.
- 1992
- IEEE Electron Device Letters
Surface and interface states for GaAs(100) (1x1) and (4x2)-c(8x2) reconstructions
- - I.M. Vitomirov
  - A. Raisanen
  - et al.
- 1992
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
High-frequency operation of heavily carbon-doped Ga_0.51In _0.49P/GaAs surface-emitting light-emitting diodes grown by metalorganic molecular beam epitaxy
- - T.J. De Lyon
  - J. Woodall
  - et al.
- 1991
- Applied Physics Letters
High carbon doping efficiency of bromomethanes in gas source molecular beam epitaxial growth of GaAs
- - T.J. De Lyon
  - N.I. Buchan
  - et al.
- 1991
- Applied Physics Letters
Photoreflectance study of surface photovoltage effects at (100)GaAs surfaces/interfaces
- - X. Yin
  - H.-M. Chen
  - et al.
- 1991
- Applied Physics Letters
Highly carbon-doped p-type Ga_0.5In_0.5As and Ga _0.5In_0.5P by carbon tetrachloride in gas-source molecular beam epitaxy
- - T.P. Chin
  - P.D. Kirchner
  - et al.
- 1991
- Applied Physics Letters
Temperature dependence of the photoreflectance of a strained layer (001) In_0.21Ga_0.79As/GaAs single quantum well
- - Y.S. Huang
  - H. Qiang
  - et al.
- 1991
- Journal of Applied Physics
Surface fermi level engineering - Or there's more to schottky barriers than just the arguments among physicists
- - J. Woodall
  - Alan C. Warren
  - et al.
- 1991
- IEE/LEOS Summer Topical Meetings 1991
Correlation of deep-level and chemically-active-site densities at vicinal GaAs(100)-Al interfaces
- - S. Chang
  - I.M. Vitomirov
  - et al.
- 1991
- Physical Review B
In situ photoreflectance study of the effects of sputter/annealing on the Fermi level at (001)n- and p-type GaAs surfaces
- - X. Yin
  - H.-M. Chen
  - et al.
- 1991
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures