Photoemission spectroscopy of GaAs:As photodiodes
- D.T. McInturff
- J. Woodall
- et al.
- 1992
- Applied Physics Letters
Paper
Publications
69 results for P.D. Kirchner
Structure and composition of GaAs(001) surfaces
- J. Falta
- R.M. Tromp
- et al.
- 1992
- Physical Review Letters
PaperGeometric ordering, surface chemistry, band bending, and work function at decapped GaAs(100) surfaces
- I.M. Vitomirov
- A. Raisanen
- et al.
- 1992
- Physical Review B
PaperRole of excess as in low-temperature-grown GaAs
- Alan C. Warren
- J. Woodall
- et al.
- 1992
- Physical Review B
PaperChemical and electronic properties of Al/[vicinal GaAs(100)] and Au/[vicinal GaAs(100)] interfaces
- S. Chang
- I.M. Vitomirov
- et al.
- 1992
- Physical Review B
PaperDirect determination of impact-ionization rates near threshold in semiconductors using soft-x-ray photoemission
- E.A. Eklund
- P.D. Kirchner
- et al.
- 1992
- Physical Review Letters
PaperPhotoreflectance characterization of an InP/InGaAs heterojunction bipolar transistor structure
- D. Yan
- Fred H. Pollak
- et al.
- 1992
- Applied Physics Letters
PaperImpact of surface processing on Al/GaAs(100) interface states
- I.M. Vitomirov
- A. Raisanen
- et al.
- 1992
- Solid State Communications
PaperFormation of two-dimensional arsenic-precipitate arrays in GaAs
- M.R. Melloch
- N. Otsuka
- et al.
- 1992
- Applied Physics Letters
PaperInP/InGaAs Heterojunction Bipolar Transistors Grown by Gas-Source Molecular Beam Epitaxy with Carbon-Doped Base
- Russell C. Gee
- Tsung-Pei Chin
- et al.
- 1992
- IEEE Electron Device Letters
Paper