Publications

69 results for P.D. Kirchner

Doping concentration dependence of radiance and optical modulation bandwidth in carbon-doped Ga_0.51In_0.49P/GaAs light-emitting diodes grown by gas source molecular beam epitaxy
- - T.J. De Lyon
  - J. Woodall
  - et al.
- 1992
- Applied Physics Letters
Structure and composition of GaAs(001) surfaces
- - J. Falta
  - R.M. Tromp
  - et al.
- 1992
- Physical Review Letters
Geometric ordering, surface chemistry, band bending, and work function at decapped GaAs(100) surfaces
- - I.M. Vitomirov
  - A. Raisanen
  - et al.
- 1992
- Physical Review B
Role of excess as in low-temperature-grown GaAs
- - Alan C. Warren
  - J. Woodall
  - et al.
- 1992
- Physical Review B
Chemical and electronic properties of Al/[vicinal GaAs(100)] and Au/[vicinal GaAs(100)] interfaces
- - S. Chang
  - I.M. Vitomirov
  - et al.
- 1992
- Physical Review B
Direct determination of impact-ionization rates near threshold in semiconductors using soft-x-ray photoemission
- - E.A. Eklund
  - P.D. Kirchner
  - et al.
- 1992
- Physical Review Letters
Formation of two-dimensional arsenic-precipitate arrays in GaAs
- - M.R. Melloch
  - N. Otsuka
  - et al.
- 1992
- Applied Physics Letters
Impact of surface processing on Al/GaAs(100) interface states
- - I.M. Vitomirov
  - A. Raisanen
  - et al.
- 1992
- Solid State Communications
Photoreflectance study of the surface Fermi level at (001) n- and p-type GaAs surfaces
- - X. Yin
  - H.-M. Chen
  - et al.
- 1992
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Photoreflectance characterization of an InP/InGaAs heterojunction bipolar transistor structure
- - D. Yan
  - Fred H. Pollak
  - et al.
- 1992
- Applied Physics Letters