Processing and reconstruction effects on Al-GaAs(100) barrier heights
- I.M. Vitomirov
- A. Raisanen
- et al.
- 1993
- Journal of Electronic Materials
Paper
Publications
69 results for P.D. Kirchner
Two-dimensional arsenic-precipitate structures in GaAs
- M.R. Melloch
- C.L. Chang
- et al.
- 1993
- Journal of Crystal Growth
PaperSolubility-limit activation of Si doping at MBE GaAs pn junctions observed by cross-sectional scanning tunneling microscopy
- Peter D. Kirchner
- Andreas Vaterlaus
- et al.
- 1993
- Journal of Crystal Growth
PaperInP/InGaAs double heterojunction bipolar transistors incorporating carbon-doped bases and superlattice graded base-collector junctions
- R.C. Gee
- C.L. Lin
- et al.
- 1993
- Electronics Letters
PaperEffect of semiconductor growth method and bulk doping on fermi level stabilization for aluminum and gold contacts on n- and p-GaAs(100)
- I.M. Vitomirov
- A. Raisanen
- et al.
- 1993
- Journal of Electronic Materials
PaperTemperature-Dependent Composition, Ordering, and Band Bending at Gap(100) Surfaces
- C.L. Lin
- L.J. Brillson
- et al.
- 1993
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Conference paperPhotoemission spectroscopy of GaAs:As photodiodes
- D.T. McInturff
- J. Woodall
- et al.
- 1992
- Applied Physics Letters
PaperDoping concentration dependence of radiance and optical modulation bandwidth in carbon-doped Ga0.51In0.49P/GaAs light-emitting diodes grown by gas source molecular beam epitaxy
- T.J. De Lyon
- J. Woodall
- et al.
- 1992
- Applied Physics Letters
PaperArsenic cluster dynamics in doped GaAs
- M.R. Melloch
- N. Otsuka
- et al.
- 1992
- Journal of Applied Physics
PaperMechanism and conditions for anomalous strain relaxation in graded thin films and superlattices
- F.K. LeGoues
- B.S. Meyerson
- et al.
- 1992
- Journal of Applied Physics
Paper