Effects of Ammonia Anneal on Electron Trappings in Silicon Dioxide
- D.W. Dong
- A. Hartstein
- 2019
- JES
Paper
Publications
9 results for S.K. Lai
Interface trap generation in silicon dioxide when electrons are captured by trapped holes
- S.K. Lai
- 1983
- Journal of Applied Physics
PaperCharacterization of plasma-enhanced chemically-vapor-deposited silicon-rich silicon dioxide/thermal silicon dioxide dual dielectric systems
- S. Yokoyama
- D.W. Dong
- et al.
- 1983
- Journal of Applied Physics
PaperSilicon-Rich SiO2 and Thermal SiO2 Dual Dielectric for Yield Improvement and High Capacitance
- Stefan K. C. Lai
- D.J. Dimaria
- et al.
- 1983
- IEEE T-ED
PaperEffects of gate metals on interface effects in metal oxide semiconductor systems after electron trapping
- S.K. Lai
- 1982
- Journal of Applied Physics
PaperTwo-carrier nature of interface-state generation in hole trapping and radiation damage
- S.K. Lai
- 1981
- Applied Physics Letters
PaperReduction of electron trapping in silicon dioxide by high-temperature nitrogen anneal
- S.K. Lai
- D.R. Young
- et al.
- 1981
- Journal of Applied Physics
PaperEffects of avalanche injection of electrons into silicon dioxide - Generation of fast and slow interface states
- S.K. Lai
- D.R. Young
- 1981
- Journal of Applied Physics
PaperThe effects of water on oxide and interface trapped charge generation in thermal SiO2 films
- F.J. Feigl
- D.R. Young
- et al.
- 1981
- Journal of Applied Physics
Paper