Buried-trench DRAM cell using a self-aligned epitaxy over trench technology
- N.C.-C. Lu
- T.V. Rajeevakumar
- et al.
- 1988
- IEDM 1988
Publications
18 results for T.V. Rajeevakumar
A 20-ns 128-Kbit X 4 High-Speed DRAM with 330-Mbit/s Data Rate
- Nicky C.C. Lu
- Hu H. Chao
- et al.
- 1988
- IEEE Journal of Solid-State Circuits
A New Failure Mode of Radiation-Induced Soft Errors in Dynamic Memories
- T.V. Rajeevakumar
- Nicky C. C. Lu
- et al.
- 1988
- IEEE Electron Device Letters
An experimental memory cell using edge-junction gates
- U. Deutsch
- T.V. Rajeevakumar
- et al.
- 1983
- IEEE Transactions on Magnetics
Vortex motion for device applications
- T.V. Rajeevakumar
- 1982
- Physica B+C
A Josephson vortex-flow device
- T.V. Rajeevakumar
- 1981
- Applied Physics Letters
A soliton device
- T.V. Rajeevakumar
- 1981
- IEEE Transactions on Magnetics
Observation of nonresonant vortex motion in a long Josephson tunnel junction
- T.V. Rajeevakumar
- John X. Przybysz
- et al.
- 1980
- Physical Review B