Measurements of the rectifying barrier heights of the various iridium silicides with n-Si
- J. De Sousa Pires
- P. Ali
- et al.
- 2008
- Applied Physics Letters
Paper
Publications
10 results for L. Stolt
Comparison of high vacuum and ultra-high-vacuum tantalum diffusion barrier performance against copper penetration
- L. Clevenger
- N.A. Bojarczuk
- et al.
- 1993
- Journal of Applied Physics
ReviewOn the formation of copper-rich copper silicides
- L. Stolt
- F.M. D'Heurle
- et al.
- 1991
- Thin Solid Films
PaperFormation of Cu3Si and its catalytic effect on silicon oxidation at room temperature
- L. Stolt
- A. Charai
- et al.
- 1991
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
PaperRoom-temperature oxidation of silicon catalyzed by Cu3Si
- J.M.E. Harper
- A. Charai
- et al.
- 1990
- Applied Physics Letters
PaperOxidation of titanium, manganese, iron, and niobium silicides: Marker experiments
- L. Stolt
- O. Thomas
- et al.
- 1990
- Journal of Applied Physics
PaperThe formation of Cu3Si: Marker experiments
- L. Stolt
- F.M. D'Heurle
- 1990
- Thin Solid Films
PaperOxidation and formation mechanisms in disilicides: VSi2 and CrSi2, inert marker experiments and interpretation
- O. Thomas
- L. Stolt
- et al.
- 1990
- Journal of Applied Physics
PaperElectrical characteristics of Ti-Si(100) interfaces
- M.O. Aboelfotoh
- L. Stolt
- et al.
- 1989
- Thin Solid Films
PaperDiffusion in intermetallic compounds with the CaF2 structure: A marker study of the formation of NiSi2 thin films
- F.M. D'Heurle
- S. Petersson
- et al.
- 1982
- Journal of Applied Physics
Paper