D.J. Arent, S. Nilsson, et al.
Applied Physics Letters
A GaAs Schottky-barrier f.e.t. (m.e.s.f.e.t.) with a 1 μm gate has been built, which is suitable for X band and Ku band applications. The unilateral power gain over the X band is above 9 dB and the noise figure is only 5 dB at 10 GHz. © 1972, The Institution of Electrical Engineers. All rights reserved.
D.J. Arent, S. Nilsson, et al.
Applied Physics Letters
Richard E. Harris, P. Wolf, et al.
IEEE Electron Device Letters
H.P. Meier, R.F. Broom, et al.
Journal of Crystal Growth
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LEOS 1990