Damon B. Farmer, Golizadeh-Mojarad Roksana, et al.
Nano Letters
A wafer-scale graphene circuit was demonstrated in which all circuit components, including graphene field-effect transistor and inductors, were monolithically integrated on a single silicon carbide wafer. The integrated circuit operates as a broadband radio-frequency mixer at frequencies up to 10 gigahertz. These graphene circuits exhibit outstanding thermal stability with little reduction in performance (less than 1 decibel) between 300 and 400 kelvin. These results open up possibilities of achieving practical graphene technology with more complex functionality and performance.
Damon B. Farmer, Golizadeh-Mojarad Roksana, et al.
Nano Letters
Bodhisatwa Sadhu, John F. Bulzacchelli, et al.
RFIC 2016
Christos Dimitrakopoulos, Yu-Ming Lin, et al.
Journal of Vacuum Science and Technology B
Bodhisatwa Sadhu, Alberto Valdes-Garcia, et al.
RFIC 2016