Alberto Valdes-Garcia, Arun Natarajan, et al.
RFIC 2013
A wafer-scale graphene circuit was demonstrated in which all circuit components, including graphene field-effect transistor and inductors, were monolithically integrated on a single silicon carbide wafer. The integrated circuit operates as a broadband radio-frequency mixer at frequencies up to 10 gigahertz. These graphene circuits exhibit outstanding thermal stability with little reduction in performance (less than 1 decibel) between 300 and 400 kelvin. These results open up possibilities of achieving practical graphene technology with more complex functionality and performance.
Alberto Valdes-Garcia, Arun Natarajan, et al.
RFIC 2013
Aaron D. Franklin, Shu-Jen Han, et al.
IEDM 2011
Arun Paidimarri, Yujiro Tojo, et al.
IEEE Open Journal of the Solid-State Circuits Society
Duixian Liu, Xiaoxiong Gu, et al.
ECTC 2023