A 23.5GHz PLL with an adaptively biased VCO in 32nm SOI-CMOS
Jean-Olivier Plouchart, Mark A. Ferriss, et al.
CICC 2012
A wafer-scale graphene circuit was demonstrated in which all circuit components, including graphene field-effect transistor and inductors, were monolithically integrated on a single silicon carbide wafer. The integrated circuit operates as a broadband radio-frequency mixer at frequencies up to 10 gigahertz. These graphene circuits exhibit outstanding thermal stability with little reduction in performance (less than 1 decibel) between 300 and 400 kelvin. These results open up possibilities of achieving practical graphene technology with more complex functionality and performance.
Jean-Olivier Plouchart, Mark A. Ferriss, et al.
CICC 2012
Xiaoxiong Gu, Duixian Liu, et al.
ECTC 2018
Zhihong Chen, Joerg Appenzeller, et al.
ISSCC 2007
Fengnian Xia, Thomas Mueller, et al.
GFP 2009