Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
The vibrational density of states of several models of hydrogenated amorphous silicon with one or two dangling bonds have been calculated using a modified Keating potential. The corresponding charge densities near the dangling bonds have also been calculated using the self-consistent pseudopotential method. The effect of mutual interaction between dangling bonds on the vibrational density of states and charge densities is also investigated. © 1985.
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
J.A. Barker, D. Henderson, et al.
Molecular Physics
K.N. Tu
Materials Science and Engineering: A