Conference paper
Effect of impurity on Cu electromigration
C.-K. Hu, Matthew Angyal, et al.
International Workshop STRESS-INDUCED PHENOMENA IN METALLIZATION 2010
A value of the constant D0Z* for grain boundary electromigration in alluminum thin films is determined to be 3(± 0.5) × 10-2. Generalized curves are provided for (v̄i/j)T against T-1 for aluminum films. These curves can be used to obtain appropriate ionic velocities at any temperature or current density for films of known grain size. © 1970 The American Institute of Physics.
C.-K. Hu, Matthew Angyal, et al.
International Workshop STRESS-INDUCED PHENOMENA IN METALLIZATION 2010
R. Rosenberg, L. Berenbaum
Applied Physics Letters
R. Rosenberg
MRS Spring Meeting 1994
C.-K. Hu, D. Canaperi, et al.
IRPS 2004