S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
We present here a complete experimental determination of the optical properties and electronic structure of the polymers poly(di-n-pentylsilane) and poly(di-n-hexylsilane) from 2 to 44 eV. The electronic structure revealed by these measurements is consistent with the assignment of the higher-energy transitions to the carbon-based sidechains and the lower-energy transitions to the silicon backbone. The transitions attributed to the silicon backbone correlate well with predictions by an independent band-structure calculation using the local-density approximation. © 1991 The American Physical Society.
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000