I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
The use as a field-effect transistor of an NaI molecule between, and separated slightly from, a pair of electrodes is explored here. The conductance of this system as a function of applied gate field is calculated for low bias using a self-consistent density functional procedure. © 2001 The American Physical Society.
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Peter J. Price
Surface Science
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.