C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
The unoccupied surface electronic structure of Gd(0001) was investigated with high-resolution inverse-photoemission spectroscopy. An empty surface state near EF is observed at Γ̄. Two other surface-sensitive features are also revealed at 1.2 and 3.1 eV above the Fermi level. Hydrogen adsorption on Gd surfaces was used to distinguish the surface-sensitive features from the bulk features. The unoccupied bulk-band critical points are determined to be Γ3+ at 1.9 eV and A1 at 0.8 eV. © 1994 The American Physical Society.
C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
R. Ghez, M.B. Small
JES
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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures