Impact of LER on Mismatch in Nanosheet Transistors for 5nm-CMOS
Chandan Kumar Jha, Charu Gupta, et al.
EDTM 2020
An intrinsic short channel mobility extraction method is proposed by measuring two short-channel devices with different channel lengths and the same source/drain and contact geometry. The constant and dynamic components of external resistance are separated. Short-channel mobility degradation is observed and its origin is studied. The possible causes of the halo doping and the non-uniformity of the inversion layer charge are accounted for. The weaker temperature dependence of short channel devices indicates that the short channel mobility degradation may result from some combination of defect-induced and Coulomb-induced scattering near the S/D regions, differing in severity between NFETs and PFETs which employ, respectively, ion implant and embedded epitaxy as the primary component of S/D design.
Chandan Kumar Jha, Charu Gupta, et al.
EDTM 2020
Sumreti Gupta, Asifa Amin, et al.
Solid-State Electronics
Anshul Gupta, Charu Gupta, et al.
IIRW 2019
C.-H.C-H. Lin, Brian Greene, et al.
IEDM 2014