Properties of Zn implanted GaN
S. Strite, P.W. Epperlein, et al.
MRS Fall Meeting 1995
Using a scanning electron microscope equipped with a low-temperature stage, we show that under the electron irradiation a superconducting tunnel junction can operate regularly. The electron beam generates a voltage signal across the current-biased junction. By recording the small voltage change synchronously with the coordinate irradiated by the beam, a two-dimensional "voltage image" of the density distribution of the junction tunneling current can be obtained. The distributions are in agreement with the magnetic interference patterns of the dc-Josephson currents in the junctions. © 1982.
S. Strite, P.W. Epperlein, et al.
MRS Fall Meeting 1995
D.M. Newns, C.C. Tsuei, et al.
Physical Review Letters
J. Oppenländer, W. Güttinger, et al.
IEEE TAS
H. Seifert, R.P. Huebener, et al.
Physics Letters A