M.A. Lutz, R.M. Feenstra, et al.
Surface Science
The magnetotransport properties of two-dimensional holes in GaAsGaAlAs heterostructures are reviewed, with emphasis in the high field regime. Temperature dependence measurements of the 1 3 and 2 3 states of the fractional quantum Hall effect yield activation energies comparable to those of 2D electrons, but that are not directly correlated with low-temperature mobilities. © 1986.
M.A. Lutz, R.M. Feenstra, et al.
Surface Science
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
O.F. Schirmer, K.W. Blazey, et al.
Physical Review B