Two-dimensional exciton dynamics in InGaAs/GaAs quantum wells

We have investigated the exciton dynamics in InGaAs/GaAs single quantum wells using time-resolved photoluminescence spectroscopy. The temperature dependence of the decay time shows that the scattering rate of two-dimensional excitons is reduced in the narrower wells compared with that of AlGaAs/GaAs quantum wells. The results suggest the dominant contribution of the alloy disorder scattering to the exciton scattering processes over the interface roughness scattering.