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Technical Digest-International Electron Devices Meeting
The current-voltage characteristics of AlAs-GaAs-AlAs heterostructures under hydrostatic pressures above 8 kbar have shown sharp negative differential resistance near zero bias. This result is understood in terms of tunneling through a GaAs potential barrier between two-dimensional electron gases formed in AlAs at the X point of the Brillouin zone. © 1990.
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
P. Alnot, D.J. Auerbach, et al.
Surface Science
K.A. Chao
Physical Review B
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ADMETA 2011