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JES
The current-voltage characteristics of AlAs-GaAs-AlAs heterostructures under hydrostatic pressures above 8 kbar have shown sharp negative differential resistance near zero bias. This result is understood in terms of tunneling through a GaAs potential barrier between two-dimensional electron gases formed in AlAs at the X point of the Brillouin zone. © 1990.
A. Reisman, M. Berkenblit, et al.
JES
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
A. Gangulee, F.M. D'Heurle
Thin Solid Films
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ADMETA 2011