Yia-Chung Chang, L.L. Chang, et al.
Applied Physics Letters
Proposed is a triode structure made of semiconductor heterojunctions where carriers of one type tunnel through the base region to which carriers of the other type are confined. In1-xGaxAs and GaSb 1-yAsy alloys are candidates for this heterostructure. As a three-terminal amplifier, the device is expected to exhibit high impedances for both input and output, a large current gain, and a marked improvement in high-frequency peformance.
Yia-Chung Chang, L.L. Chang, et al.
Applied Physics Letters
R. Tsu, L. Esaki
Applied Physics Letters
J. Beerens, G. Grégoris, et al.
Physical Review B
G.A. Sai-Halasz, L.L. Chang, et al.
Solid State Communications