E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
We describe theoretically a new, transient, photovoltaic effect which occurs in superlattices presenting a spatial separation of the electron and hole wavefunctions together with a lack of global reflection symmetry. The luminescence of an InAs-GaSb semiconductor superlattice under pulsed excitation shows an increase of the band gap with the density of injected carriers, which we relate to this photovoltaic effect. © 1986.
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
Q.R. Huang, Ho-Cheol Kim, et al.
Macromolecules
K.N. Tu
Materials Science and Engineering: A